Light-emitting device with reflective ceramic substrate

ABSTRACT

A light-emitting device may include a ceramic substrate having a reflective component, a light-emitting diode on the ceramic substrate, and a light-converting material over the light-emitting diode. A lighting system may include a ceramic substrate having a reflective component, a plurality of light-emitting diodes connected together in series, wherein the plurality of light-emitting diodes are on the ceramic substrate, and a light-converting material over the plurality of light-emitting diodes. The ceramic substrate may provide electrical insulation between the light-emitting diode and the aluminum carrier. The ceramic substrate may provide thermal conductivity between the light-emitting diode and the aluminum carrier. The reflective component may include zirconium oxide. The ceramic substrate may include aluminum oxide and/or aluminum nitride. The light-converting material may include phosphor. The light-emitting diode may have an epitaxial diode structure.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/231,657, filed Mar. 31, 2014, the entire contents of which are herebyincorporated by reference.

FIELD

The present disclosure relates generally to a light-emitting device and,more particularly, to a light-emitting device with a reflective ceramicsubstrate.

BACKGROUND

A light-emitting device may include a substrate located betweenlight-emitting diodes and a heat sink. Different substrates may havedifferent thermal conductivities, different electrical conductivities,and/or different conversion efficiencies. A substrate with low thermalconductivity may transfer relatively less heat from the light-emittingdiodes to the heat sink, thereby causing the light-emitting diodes tooverheat. A substrate with high electrical conductivity may allowrelatively more power to escape through the substrate, therebydecreasing power efficiency of the light-emitting device. A substratewith low conversion efficiency may have relatively highlight-absorption, thereby decreasing the total emission of light fromthe light-emitting device.

In existing systems, the substrate may include sapphire or silicon.However, sapphire has low thermal conductivity, and silicon has highelectrical conductivity and low conversion efficiency. Although anelectrical insulator may be added between a silicon substrate and theheat sink in order to reduce electrical conductivity, providing such anadditional layer adds manufacturing steps and production costs.Therefore, a need exists for a substrate that has high thermalconductivity, dielectric properties, and high conversion efficiency,without requiring additional manufacturing steps.

SUMMARY

Several aspects of the present invention will be described more fullyhereinafter with reference to various apparatuses.

One aspect of a light-emitting device is disclosed. A light-emittingdevice may include a ceramic substrate having a reflective component, alight-emitting diode on the ceramic substrate, and a light-convertingmaterial over the light-emitting diode.

One aspect of a lighting system is disclosed. A lighting system mayinclude a ceramic substrate having a reflective component, a pluralityof light-emitting diodes connected together in series, wherein theplurality of light-emitting diodes are on the ceramic substrate, and alight-converting material over the plurality of light-emitting diodes.

It is understood that other aspects of apparatuses will become readilyapparent to those skilled in the art from the following detaileddescription, wherein various aspects of apparatuses and methods areshown and described by way of illustration. As understood by one ofordinary skill in the art, these aspects may be implemented in other anddifferent forms and its several details are capable of modification invarious other respects. Accordingly, the drawings and detaileddescription are to be regarded as illustrative in nature and not asrestrictive.

BRIEF DESCRIPTION OF THE DRAWINGS

Various aspects of apparatuses will now be presented in the detaileddescription by way of example, and not by way of limitation, withreference to the accompanying drawings, wherein:

FIGS. 1A-1C are side view illustrations of various exemplary apparatuseshaving a light-emitting device.

FIG. 2A is a top view illustration of an exemplary embodiment of alight-emitting device.

FIGS. 2B and 2C are top and side view illustrations of an exemplaryembodiment of a light-emitting diode.

FIG. 3A is a side view illustration of another exemplary embodiment of alight-emitting device.

FIG. 3B is a cross-section illustration of the exemplary light-emittingdevice shown in FIG. 3A.

FIG. 4A is a side view illustration of an exemplary embodiment of alight-emitting device with electrodes using an encapsulant.

FIG. 4B is a side view illustration of another exemplary embodiment of alight-emitting device with electrodes using a transparent encapsulantand a reflective layer on the electrodes.

DETAILED DESCRIPTION

The detailed description set forth below in connection with the appendeddrawings is intended as a description of various exemplary embodimentsof the present invention and is not intended to represent the onlyembodiments in which the present invention may be practiced. Thedetailed description includes specific details for the purpose ofproviding a thorough understanding of the present invention. However, itwill be apparent to those skilled in the art that the present inventionmay be practiced without these specific details. In some instances,well-known structures and components are shown in block diagram form inorder to avoid obscuring the concepts of the present invention. Acronymsand other descriptive terminology may be used merely for convenience andclarity and are not intended to limit the scope of the invention.

The word “exemplary” is used herein to mean serving as an example,instance, or illustration. Any embodiment described herein as“exemplary” is not necessarily to be construed as preferred oradvantageous over other embodiments. Likewise, the term “embodiment” ofan apparatus, method or article of manufacture does not require that allembodiments of the invention include the described components,structure, features, functionality, processes, advantages, benefits, ormodes of operation.

The various aspects of the present invention illustrated in the drawingsmay not be drawn to scale. Rather, the dimensions of the variousfeatures may be expanded or reduced for clarity. In addition, some ofthe drawings may be simplified for clarity. Thus, the drawings may notdepict all of the components of a given apparatus or method. Variousaspects of the present invention will be described herein with referenceto drawings that are schematic illustrations of idealized configurationsof the present invention. As such, variations from the shapes of theillustrations as a result, for example, manufacturing techniques and/ortolerances, are to be expected. Thus, the various aspects of the presentinvention presented throughout this disclosure should not be construedas limited to the particular shapes of elements (e.g., regions, layers,sections, substrates, bulb shapes, etc.) illustrated and describedherein but are to include deviations in shapes that result, for example,from manufacturing. By way of example, an element illustrated ordescribed as a rectangle may have rounded or curved features and/or agradient concentration at its edges rather than a discrete change fromone element to another. Thus, the elements illustrated in the drawingsare schematic in nature and their shapes are not intended to illustratethe precise shape of an element and are not intended to limit the scopeof the present invention.

It will be understood that when an element such as a region, layer,section, substrate, or the like, is referred to as being “on” anotherelement, it can be directly on the other element or intervening elementsmay also be present. In contrast, when an element is referred to asbeing “directly on” another element, there are no intervening elementspresent. It will be further understood that when an element is referredto as being “formed” on another element, it can be grown, deposited,etched, attached, connected, coupled, or otherwise prepared orfabricated on the other element or an intervening element.

It will be further understood that the terms “comprises” and/or“comprising,” when used in this specification, specify the presence ofstated features, steps, operations, elements, and/or components, but donot preclude the presence or addition of one or more other features,integers, steps, operations, elements, components, and/or groupsthereof. The term “and/or” includes any and all combinations of one ormore of the associated listed items.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by aperson having ordinary skill in the art to which this invention belongs.It will be further understood that terms, such as those defined incommonly used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand the present disclosure and will not be interpreted in an idealizedor overly formal sense unless expressly so defined herein.

In the following detailed description, various aspects of the presentinvention will be presented in the context of a light-emitting device.However, those skilled in the art will realize that these aspects may beextended to other apparatus and/or their features, operations, elements,and/or components. Accordingly, any reference to a light-emitting deviceis intended only to illustrate the various aspects of the presentinvention, with the understanding that such aspects may have a widerange of applications.

Applicant hereby incorporates by reference the disclosure previouslyprovided in U.S. patent application Ser. No. 12/705,240, filed on Feb.12, 2010, which is now U.S. Pat. No. 8,371,718.

FIG. 1A is a side view illustration of an exemplary apparatus 100 havinga light-emitting device 102. The light-emitting device 102 may belocated in a housing 106. The light-emitting device 102 may receivepower via a power connection 104. The light-emitting device 102 may beconfigured to emit light. Description pertaining to the process by whichlight is emitted by the light-emitting device 102 is provided infra withreference to FIGS. 2A-2C.

FIG. 1B is a side view illustration of a flashlight 110, which is anexemplary embodiment of an apparatus having the light-emitting device102. The light-emitting device 102 may be located inside of the housing106. The flashlight 110 may include a power source. In some exemplaryembodiments, the power source may include batteries 114 located insideof a battery enclosure 112. The power connection 104 may transfer powerfrom the power source (e.g., the batteries 114) to the light-emittingdevice 102.

FIG. 1C is a side view illustration of a street light 120, which isanother exemplary embodiment of an apparatus having the light-emittingdevice 102. The light-emitting device 102 may be located inside of thehousing 106. The street light 120 may include a power source. In someexemplary embodiments, the power source may include a power generator122. The power connection 104 may transfer power from the power source(e.g., the power generator 122) to the light-emitting device 102.

FIG. 2A is a top view illustration of an exemplary embodiment of thelight-emitting device 102. The light-emitting device 102 may have one ormore light-emitting diodes 202. In some exemplary embodiments, thelight-emitting diodes 202 may have an epitaxial diode structure. Thelight-emitting diodes 202 may be configured in various arrays. AlthoughFIG. 2A illustrates an example array with three rows and three columns,one of ordinary skill in the art will appreciate that alternative arraysmay have fewer or greater numbers of rows and/or columns withoutdeviating from the scope of the present disclosure. One of ordinaryskill in the art will also appreciate that the distance separating thelight-emitting diodes 202 may be uniform or non-uniform withoutdeviating from the scope of the present disclosure.

FIG. 2B is a top view illustration of the exemplary embodiment of thelight-emitting diode 202 shown in FIG. 2A. FIG. 2C is a side viewillustration of the exemplary embodiment of the light-emitting diode 202shown in FIG. 2A. The light-emitting diode 202 may include contacts 204.The contacts 204 may be configured to receive power from a driver thatis electrically connected to a power source (e.g., batteries 114 in FIG.1B and/or power generator 122 in FIG. 1C). The driver can includecircuitry that converts AC-to-DC power, converts DC-to-DC power,regulates current, provides power to other electronic components,provides power to generate light in the LED, etc. The contacts 204 mayprovide power to the area 206.

The area 206 includes an n-type semiconductor region and a p-typesemiconductor region. The n-type semiconductor region is predominated byelectrons. The p-type semiconductor region is predominated by holes.During operation of the light-emitting diode 202, a reverse electricfield is created at the junction between the n-type semiconductor regionand the p-type semiconductor region (sometimes referred to herein as the“p-n junction”). The reverse electric field causes the electrons andholes to move away from the p-n junction, thereby forming an activeregion. When forward voltage sufficient to overcome the reverse electricfield is applied across the p-n junction, electrons and holes are forcedinto the active region and are combined together. When electrons combinewith holes, the particles fall to lower energy levels. Falling to lowerenergy levels causes energy to be released, and the energy released maybe in the form of emitted light. Accordingly, power applied to thecontacts 204 can cause light to be emitted by the light-emitting diode202.

FIG. 3A is a side view illustration of an exemplary embodiment of thelight-emitting device 102, which may include one or more light-emittingdiodes 202. The light-emitting device 102 may have contacts 204 thatreceive power. In some configurations, power may be transferred to thelight-emitting diodes 202 via electrical traces 306. The electricaltraces 306 may connect a light-emitting diode 202 to a power source 304.The electrical traces 306 may also connect a light-emitting diode 202 toanother light-emitting diode 202. In some configurations, an electricalinsulator 302 may separate the power source 304 from other portions ofthe light-emitting device 102. In some configurations, a bonded pad 308may separate the electrical insulator 302 from the ceramic substrate310. A die attach material 312 may secure the ceramic substrate 310 toan aluminum carrier 314. The aluminum carrier 314 may be a heat sink(e.g., an element that absorbs heat).

The light-emitting diodes 202 may be positioned on top of the ceramicsubstrate 310. The ceramic substrate 310 may include various materials.In some exemplary embodiments, the ceramic substrate 310 may includesilicon (Si). Silicon provides thermal conductivity of approximately 150W/mK. Accordingly, silicon provides good thermal conductivity. In someexemplary embodiments, the ceramic substrate 310 may include aluminumnitride (AlN). Aluminum nitride provides thermal conductivity ofapproximately 285 W/mK. Accordingly, aluminum nitride also provides goodthermal conductivity. Also, aluminum nitride may provide a band gap(also known as an ‘energy gap’) of approximately 6.2 eV. Accordingly,aluminum nitride has low conductivity efficiency and therefore lowelectrical conductivity. In some exemplary embodiments, the ceramicsubstrate 310 may include aluminum oxide (Al₂O₃).

The foregoing embodiments provide non-limiting examples of materialsthat may be provided in the ceramic substrate 310 to provide (1) highthermal conductivity and/or (2) low electrical conductivity. Highthermal conductivity provides for high rates of heat transfer throughthe ceramic substrate 310 and, therefore, away from the light-emittingdiodes 202. Transfer of heat away from the light-emitting diodes 202prevents over-heating of the light-emitting diodes 202. Over-heating ofthe light-emitting diodes 202 may increase the temperature at the p-njunction and thereby decrease the overall performance of thelight-emitting diodes 202. Accordingly, the ceramic substrate 310 mayprovide at least some thermal conductivity between at least onelight-emitting diode 202 and the aluminum carrier 314.

Low electrical conductivity prevents power from escaping through theceramic substrate 310. Power escaping through the ceramic substrate 310may require additional power to be provided to other light-emittingdiodes 202 connected in series, thereby reducing power efficiency of theoverall light-emitting device 102. Accordingly, the ceramic substrate310 may provide at least some electrical insulation between at least onelight-emitting diode 202 and the aluminum carrier 314.

The ceramic substrate 310 may also include a reflective component. Insome exemplary embodiments, the reflective component includes zirconiumoxide (ZrO₂). The reflective component (e.g., zirconium oxide) may beinfused throughout the ceramic substrate 310. The reflective componentmay increase the reflective properties of the ceramic substrate 310.Generally, reflectivity refers to the degree to which a materialreflects light emitted onto it. The reflectivity of a material may bemeasured according to a reflectivity index or a percentage of light thatreflects when light is emitted onto it. For example, a percentreflectivity of the ceramic substrate 310 having the reflectivecomponent may be at least 70%.

The foregoing embodiments provide non-limiting examples of materialsthat may be provided in the ceramic substrate 310 to provide highreflectivity of light. In FIG. 3A, a beam of light is illustrated witharrow 318. The beam of light (e.g., arrow 318) is emitted by alight-emitting diode 202. Some of the emitted light travels in thedirection of the ceramic substrate 310. Based on the reflectivity of theceramic substrate 310, a percentage of the light emitted onto theceramic substrate 310 will be reflected away from the ceramic substrate310 and a percentage of the light emitted onto the ceramic substrate 310will be absorbed by the ceramic substrate 310. High reflectivity oflight corresponds to low absorption of light (also known as“self-absorption”) by the ceramic substrate 310. High reflectivity oflight also corresponds to high conversion efficiency (e.g., a high ratioof the light output by the light-emitting device 102 relative to thepower consumed by the light-emitting device 102). Overall, highreflectivity of light contributes to improved light output by thelight-emitting device 102.

A light-converting material 316 may be provided on the ceramic substrate310 and/or the light-emitting diodes 202. When light emitted by thelight-emitting diodes 202 passes through the light-converting material316, the color of the light may change. In some embodiments, thelight-converting material 316 is phosphor. For example, a layer ofphosphor may be provided over the light-emitting diodes 202.

FIG. 3B is a cross-section illustration of the light-emitting device102. More specifically, FIG. 3B illustrates the cross-section taken atlocation 320 in FIG. 3A. At location 320, the light-converting material316 forms a top layer, which may be a layer of phosphor that convertsthe color of the light emitted by the light-emitting diode 202. Thelight-emitting diode 202 is provided on top of the ceramic substrate310.

The ceramic substrate may include various materials (e.g., silicon,aluminum nitride, and/or aluminum oxide) that may increase thermalconductivity and/or decrease electrical conductivity of the ceramicsubstrate 310. Increasing thermal conductivity of the ceramic substrate310 may increase heat transfer away from the light-emitting diode 202,thereby improving the performance of the light-emitting diode 202.Decreasing electrical conductivity of the ceramic substrate 310 maydecrease power loss, thereby improving power efficiency of thelight-emitting device 102.

The ceramic substrate 310 may also include a reflective component (e.g.,zirconium oxide), which may be infused throughout the ceramic substrate310. The reflective component may increase the reflectivity of theceramic substrate 310, which consequently decreases self-absorption,increases conversion efficiency, and increases overall light output. Thedie attach material 312 may secure the ceramic substrate 310 to thealuminum carrier 314.

One of ordinary skill in the art will appreciate that any descriptionprovided with respect to the light-emitting device 102 may also apply toany lighting system, any light-emitting apparatus, and/or any otherapparatus that emits light.

FIG. 4A is a side view illustration of an exemplary embodiment of thelight-emitting device 402. Light emitting device 402 includes lightemitting layers 410, contact layers 412, electrodes 414 (two shown), andencapsulant 416. Light emitting layers 410 can include gallium nitride(GaN) containing layers and/or aluminum indium gallium phosphide(AlInGaP) containing layers, that are fabricated on sapphire, silicon(Si), silicon carbide (SiC), gallium arsenide (GaAs), indium phosphide(InP), gallium phosphide (GaP), gallium nitride (GaN), ceramic, or othersuitable substrate. Light emitting layers 410 can be fabricated byepitaxially growing the layers on the substrate using Metal-OrganicChemical Vapor Deposition (MOCVD). Contact layers 412 can include p andn contact layers. The p contact layer can include materials suchaluminum based or silver based materials having high reflectivity. The ncontact layer can include materials such as titanium or aluminumcontaining alloys. The p and n contact layers are electrically isolatedfrom each other and electrically coupled to the electrodes 414. The pand n contact layers, which are disposed within contact layer 412, canbe electrically isolated from each other via a dielectric materialdisposed between them. P and n contact layers can be formed using aburied contact architecture as is understood by those skilled in theart. Electrodes 414 are used to make electrical contacts from externalleads or conductors (not shown) to the contact layers 412 which areelectrically coupled to the light emitting layers 410. Electrodes 414can be formed from copper, nickel, chrome, chromium or combinationsthereof.

Encapsulant 416 can be used to encapsulate and surround electrodes 414on at least one side. Encapsulant 416 can also provide support to theentire LED device 402 so that LED device 402 is more stable, rigid anddoes not deform during processing or handling. Encapsulant 416 is atransparent encapsulant that can be formed from a silicone basedmaterial. Transparent encapsulant 416 can be cured to become solid.Alternatively, transparent encapsulant 416 can be fabricated usingspin-on dielectric materials or spin-on glass materials, which can alsobe subsequently cured to make solid. In another alternate embodiment,transparent encapsulant 416 is formed using compression molding,transfer molding or injection molding techniques.

During operation, a portion of the light emitted by light emittinglayers 410 is scattered by surrounding packaging components used topackage the LED device 402. The transparent encapsulant permits thescattered light to pass through with minimal absorption. By usingtransparent encapsulant 416, the efficiency of a packaged LED device issignificantly improved because light is not absorbed by the transparentencapsulant material. For example, in a multi-chip package usingtransparent encapsulant 416 the efficiency can be between 5% and 10%greater than in a multi-chip package using non-transparent encapsulant.

FIG. 4B is a side view illustration of an exemplary embodiment of thelight-emitting device 404. Light emitting device 404 includes lightemitting layers 410, contact layers 412, electrodes 414 (two shown),encapsulant 416 and reflective layers 418. Light emitting layers 410 caninclude gallium nitride (GaN) containing layers and/or aluminum indiumgallium phosphide (AlInGaP) containing layers, that are fabricated onsapphire, silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs),indium phosphide (InP), gallium phosphide (GaP), gallium nitride (GaN),ceramic, or other suitable substrate. Light emitting layers 410 can befabricated by epitaxially growing the layers on the substrate usingMOCVD. Contact layers 412 can include p and n contact layers. The pcontact layer can include materials such aluminum based or silver basedmaterials having high reflectivity. The n contact layer can includematerials such as titanium or aluminum containing alloys. The p and ncontact layers are electrically isolated from each other andelectrically coupled to the electrodes 414. The p and n contact layers,which are disposed within contact layer 412, can be electricallyisolated from each other via a dielectric material disposed betweenthem. P and n contact layers can be formed using a buried contactarchitecture as is understood by those skilled in the art. Electrodes414 are used to make electrical contacts from external leads orconductors (not shown) to the contact layers 412 which are electricallycoupled to the light emitting layers 410. Electrodes 414 can be formedfrom copper, nickel, chrome, chromium or combinations thereof.Reflective layers 418 surround the electrodes 414 and are used toreflect light from the electrode 414.

Encapsulant 416 can be used to encapsulate and surround electrodes 414and reflective layers 418 on at least one side. Encapsulant 416 can alsoprovide support to the entire LED device 404 so that LED device 404 ismore stable, rigid and does not deform during processing or handling.Encapsulant 416 is a transparent encapsulant that can be formed from asilicone based material. Transparent encapsulant 416 can be cured tobecome solid. Alternatively, transparent encapsulant 416 can befabricated using spin-on dielectric materials or spin-on glassmaterials, which can also be subsequently cured to make solid. Inanother alternate embodiment, transparent encapsulant 416 is formedusing compression molding, transfer molding or injection moldingtechniques.

Reflective layers 418 are used to enhance the efficiency of the packagedLED by reflecting scattered light from the electrodes 414, which wouldotherwise be partially absorbed by the electrodes 414. Reflective layeris fabricated from aluminum based, titanium oxide or other white orreflective materials. The reflective layer is fabricated on the walls ofthe electrodes by plating, sputtering, spraying etc. During operation, aportion of the light emitted by light emitting layers 410 is scatteredby surrounding packaging components used to package the LED device 404.The transparent encapsulant 416 permits the scattered light to passthrough with minimal absorption. The reflective layer 418, which isformed on the electrodes 414, reflects light from electrodes 414 so thatelectrodes 414 do not absorb the light passing through the encapsulant.Reflective layers 418 enhance the efficiency of the packaged LED device404. In some embodiments, the efficiency of a packaged LED device 404,which includes both transparent encapsulant 416 and a reflective layer418 on the electrodes 414, is significantly improved. For example, in amulti-chip package using transparent encapsulant 416 and a reflectivelayer 418 on the electrodes 414, the efficiency can be greater than 5%to 10% than in a multi-chip package using non-transparent encapsulant.

The various aspects of this disclosure are provided to enable one ofordinary skill in the art to practice the present invention. Variousmodifications to exemplary embodiments presented throughout thisdisclosure will be readily apparent to those skilled in the art, and theconcepts disclosed herein may be extended to other devices. Thus, theclaims are not intended to be limited to the various aspects of thisdisclosure, but are to be accorded the full scope consistent with thelanguage of the claims. All structural and functional equivalents to thevarious components of the exemplary embodiments described throughoutthis disclosure that are known or later come to be known to those ofordinary skill in the art are expressly incorporated herein by referenceand are intended to be encompassed by the claims. Moreover, nothingdisclosed herein is intended to be dedicated to the public regardless ofwhether such disclosure is explicitly recited in the claims. No claimelement is to be construed under the provisions of 35 U.S.C. § 112(f)unless the element is expressly recited using the phrase “means for” or,in the case of a method claim, the element is recited using the phrase“step for.”

1. (canceled)
 2. A light-emitting device comprising: a substratecomprising a first material and a reflective material infused throughoutthe substrate in the first material; a carrier having a reflectivesurface and a die attach material that secures the substrate directly tothe carrier; a light-emitting diode disposed on the substrate andconfigured to receive power from a power source; a plurality of parallellight-converting material layers configured to surround sides of thelight-emitting diode; and an electrical insulator disposed above thesubstrate separate from the plurality of parallel light-convertingmaterial layers, the electrical insulator configured to electricallyinsulate the power source from the substrate and the carrier; whereinthe substrate is secured directly to the carrier via the die attachmaterial and without an additional separate intervening electricalinsulator.
 3. The light-emitting device according to claim 2, whereinthe substrate is a ceramic substrate and the first material comprises atleast one of aluminum oxide (Al2O3), aluminum nitride (AlN), and silicon(Si).
 4. The light-emitting device according to claim 2, wherein thepower source is disposed directly on and above the electrical insulator,and the substrate is disposed below and on an opposite side of theelectrical insulator with an intervening bonding pad therebetween. 5.The light-emitting device according to claim 2, wherein the reflectivesurface comprises zirconium oxide (ZrO2).
 6. The light-emitting deviceaccording to claim 2, wherein the substrate is a ceramic substrateconfigured to provide at least some electrical insulation between thelight-emitting diode and the carrier.
 7. The light-emitting deviceaccording to claim 2, wherein the substrate is a ceramic substrateconfigured to provide at least some thermal conductivity between thelight-emitting diode and the carrier.
 8. The light-emitting device ofclaim 2, wherein the plurality of parallel light-converting materiallayers comprises phosphor.
 9. A light-emitting device comprising: asubstrate comprising a reflective material infused throughout thesubstrate; a carrier having a reflective surface and being coupleddirectly to the substrate; a light-emitting diode disposed on thesubstrate and configured to receive power from a power source; at leastone light-converting material layer configured to surround sides of thelight-emitting diode; and an electrical insulator disposed above thesubstrate separate from the at least one light-converting materiallayer, the electrical insulator configured to electrically insulate thepower source from the substrate and the carrier; wherein the substrateis secured directly to the carrier via a die attach material and withoutan additional separate intervening electrical insulator.
 10. Thelight-emitting device according to claim 9, wherein the substratecomprises a first material and the reflective material is infusedthroughout the first material.
 11. The light-emitting device accordingto claim 10, wherein the first material comprises at least one ofaluminum oxide (Al2O3), aluminum nitride (AlN), and silicon (Si). 12.The light-emitting device according to claim 9, wherein the power sourceis disposed directly on and above the electrical insulator, and thesubstrate is disposed below and on an opposite side of the electricalinsulator with an intervening bonding pad therebetween.
 13. Thelight-emitting device according to claim 9, wherein the reflectivesurface comprises zirconium oxide (ZrO2).
 14. The light-emitting deviceaccording to claim 9, wherein the substrate is a ceramic substrateconfigured to provide at least some electrical insulation between thelight-emitting diode and the carrier.
 15. The light-emitting deviceaccording to claim 9, wherein the substrate is a ceramic substrateconfigured to provide at least some thermal conductivity between thelight-emitting diode and the carrier.
 16. The light-emitting device ofclaim 9, wherein the at least one light-converting material layercomprises a plurality of parallel light-converting material layersformed of phosphor.
 17. A lighting system comprising: a substratecomprising a first material and a reflective material infused throughoutthe substrate in the first material; a carrier having a reflectivesurface and a die attach material that secures the substrate directly tothe carrier; a plurality of light-emitting diodes connected in seriesand disposed on the substrate, with the plurality of light-emittingdiodes being configured to receive power from a power source; aplurality of parallel light-converting material layers configured tosurround three sides of the light-emitting diode, respectively; and anelectrical insulator disposed above the substrate separate from theplurality of parallel light-converting material layers, the electricalinsulator configured to electrically insulate the power source from thesubstrate and the carrier; wherein the substrate is secured directly tothe carrier via the die attach material and without an additionalseparate intervening electrical insulator.
 18. The lighting systemaccording to claim 17, wherein the substrate is a ceramic substrate andthe first material comprises at least one of aluminum oxide (Al2O3),aluminum nitride (AlN), and silicon (Si).
 19. The lighting systemaccording to claim 17, wherein the power source is disposed directly onand above the electrical insulator, and the substrate is disposed belowand on an opposite side of the electrical insulator with an interveningbonding pad therebetween.
 20. The lighting system according to claim 17,wherein the substrate is a ceramic substrate configured to provide atleast some electrical insulation between the light-emitting diode andthe carrier.
 21. The lighting system according to claim 17, wherein thesubstrate is a ceramic substrate configured to provide at least somethermal conductivity between the light-emitting diode and the carrier.